The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Jul. 07, 2008
Ming-tsong Wang, Taipei, TW;
Tong-chern Ong, Taipei, TW;
Albert Chin, Hsin-Chu, TW;
Hsueh-jen Yang, Taipei, TW;
Ming-Tsong Wang, Taipei, TW;
Tong-Chern Ong, Taipei, TW;
Albert Chin, Hsin-Chu, TW;
Hsueh-Jen Yang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device includes a semiconductor substrate; a tunneling layer over the semiconductor substrate, wherein the tunneling layer has a first conduction band; a storage layer over the tunneling layer, wherein the storage layer has a second conduction band; a blocking layer over the storage layer, wherein the blocking layer has a third conduction band; a gate electrode over the blocking layer; and at least one of a first leakage-inhibition layer and a second leakage-inhibition layer. The first leakage-inhibition layer is between the tunneling layer and the storage layer, and has a fourth conduction band lower than the first conduction band. The second leakage-inhibition layer is between the blocking layer and the gate electrode, and has a fifth conduction band lower than the third conduction band.