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Eindhoven, Netherlands

Adrianus W Ludikhuize

This inventor holds 29 USPTO granted patents and 1 EPO patent, primarily in High-Voltage Semiconductor Devices. Top assignees: U.S. Philips Corporation, Nxp B.v., Koninklijke Philips Corporation N.v.. Active years: 1977-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Adrianus W Ludikhuize. Retrieved from https://idiyas.com/inventor/adrianus-w-ludikhuize

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 29

% Patents Active = 100.0


Average Co-Inventor Count = 1.3

ph-index = 9

Forward Citations = 399(Granted Patents)


Location History:

  • Eindhoven, NL (1977 - 2008)
  • Valkenswaard, NL (2010 - 2011)

Company Filing History:

goldMedal22 out of 14,087 
 
U.S. Philips Corporation
 patents
silverMedal3 out of 5,325 
 
Nxp B.v.
 patents
bronzeMedal2 out of 21,894 
 
Koninklijke Philips Corporation N.v.
 patents
4. 2 out of 77 
 
U.S. Phillips Corporation
 patents

Years Active: 1977-2011

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Areas of Expertise:
High-Voltage Transistors
LDMOS
Breakdown Voltage
Integrated Circuits
Power Circuit
DMOS Transistor
Circuit Arrangement
MOS Transistors
Attenuators
Screening Layer
Floating Semiconductor Zones
Manufacturing Methods
29 patents (USPTO):Explore Patents
1. 8022506 - SOI device with more immunity from substrate voltage (2011-09-20),
2. 7790589 - Method of providing enhanced breakdown by diluted doping profiles in high-voltage transistors (2010-09-07),
3. 7459750 - Integrated half-bridge power circuit (2008-12-02),
4. 7061059 - Semiconductor device (2006-06-13),
5. 6933559 - LDMOS with guard ring (of same type as drain) surrounding the drain (2005-08-23),
6. 6288424 - Semiconductor device having LDMOS transistors and a screening layer (2001-09-11),
7. 6160304 - Semiconductor device comprising a half-bridge circuit (2000-12-11),
8. 616030 - Semiconductor device comprising a half-bridge circuit (2000-12-12),
9. 5998845 - Semiconductor device having increased safe operating range (1999-12-07),
10. 5976942 - Method of manufacturing a high-voltage semiconductor device (1999-11-02),
11. 5910670 - Semiconductor device with improved breakdown voltage characteristics (1999-06-08),
12. 5883413 - Lateral high-voltage DMOS transistor with drain zone charge draining (1999-03-16),
13. 5796146 - Semiconductor device having a lateral insulated gate biopolar transistor (1998-08-18),
14. 5786252 - Method of manufacturing a semiconductor device, and semiconductor device (1998-07-28),
15. 5747841 - Circuit arrangement, and junction field effect transistor suitable for (1998-05-05),

Title: Inventor Adrianus W Ludikhuize

Introduction: Adrianus W Ludikhuize is a renowned inventor based in Eindhoven, Netherlands, known for his groundbreaking contributions to various technological fields.

Latest Patents: Adrianus W Ludikhuize holds several patents in the areas of renewable energy technologies, advanced materials, and innovative manufacturing processes.

Career Highlights: With a career spanning over two decades, Ludikhuize has worked with leading research institutions and companies to develop cutting-edge solutions that have revolutionized industries worldwide.

Collaborations: Throughout his career, Adrianus W Ludikhuize has collaborated with top engineers, scientists, and inventors to bring his ideas to life, resulting in successful products and technologies that have had a lasting impact.

Conclusion: Adrianus W Ludikhuize's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in the global technology landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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