The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2011
Filed:
Dec. 15, 2005
Adrianus W. Ludikhuize, Valkenswaard, NL;
Adrianus W. Ludikhuize, Valkenswaard, NL;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor on insulator device has an insulator layer, an active layer () on the insulator layer, a lateral arrangement of collector (), emitter () and base () on the active layer, and a high Base-dose region () extending under the emitter towards the insulator to suppress vertical current flowing under the emitter. This region () reduces the dependence of current-gain and other properties on the substrate (Handle-wafer) voltage. This region can be formed of the same doping type as the base, but having a stronger doping. It can be formed by masked alignment in the same step as an n type layer used as the body for a P-type DMOS transistor.