The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2006
Filed:
Dec. 18, 2000
Constantinus Paulus Meeuwsen, Nijmegen, NL;
Adrianus Willem Ludikhuize, Eindhoven, NL;
Constantinus Paulus Meeuwsen, Nijmegen, NL;
Adrianus Willem Ludikhuize, Eindhoven, NL;
Abstract
The invention relates to a high-voltage deep depletion transistor, provided in a semiconductor body () having a substrate () of a first conductivity type, for example the p-type, and a surface layer () of the opposite conductivity type, for example the n-type for an n-channel transistor. To prevent formation of inversion layers below the gate, the channel is subdivided into a plurality of sub-channel regions () mutually separated by p-type regions () which serve to remove generated holes. The p-type regions extend across the whole thickness of the channel and are contacted via the substrate. Each sub-channel region may be subdivided further by intermediate p-type regions () to improve the removal of holes.