The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 1999
Filed:
Dec. 22, 1997
Applicant:
Inventor:
Adrianus W Ludikhuize, Eindhoven, NL;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257401 ; 257343 ;
Abstract
The breakdown voltage at high current values can be reduced in a HV-MOST with a weakly doped drain extension and a conventional interdigitated source/drain configuration,so that the SOAR (safe operating area) is reduced. The invention is based inter alia on the recognition that breakdown occurs at the end faces of the drain fingers at high current values owing to current convergences and the accompanying Kirk effect. To widen the SOAR of the transistor, the tips 8 of the drain fingers 5, 6 are rendered inactive in that the source fingers 4 are locally interrupted. In an optimized embodiment, the source fingers 4 shorter than the drain fingers 5,6.