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For the Inventor, By the Inventor

Portland, OR, United States of America

Aaron A Budrevich

This inventor holds 22 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignee: Intel Corporation. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Aaron A Budrevich. Retrieved from https://idiyas.com/inventor/aaron-a-budrevich

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 50.0

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 70(Granted Patents)


Company Filing History:

goldMedal22 out of 56,322 
 
Intel Corporation
 patents

Years Active: 2009-2026

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Areas of Expertise:
Integrated Circuit Structures
Dopant Diffusion
Vertical Trenches
Non-Planar Transistor
Doping Methods
Metallic Source Regions
Germanium-Rich Layers
High-K Dielectric
Dopant Confinement
Quantum Well Structures
Group II Alloys
Barrier Layers
22 patents (USPTO):Explore Patents
1. 12648200 - Integrated circuit structures with source or drain dopant diffusion blocking layers (2026-06-02),
2. 12342611 - Source or drain structures with vertical trenches (2025-06-24),
3. 11935887 - Source or drain structures with vertical trenches (2024-03-19),
4. 11735630 - Integrated circuit structures with source or drain dopant diffusion blocking layers (2023-08-22),
5. 11264453 - Methods of doping fin structures of non-planar transistor devices (2022-03-01),
6. 11222947 - Methods of doping fin structures of non-planar transistor devices (2022-01-11),
7. 10896907 - Retrograde transistor doping by heterojunction materials (2021-01-19),
8. 10896852 - Methods for doping a sub-fin region of a semiconductor fin structure and devices containing the same (2021-01-19),
9. 10847653 - Semiconductor device having metallic source and drain regions (2020-11-24),
10. 10008565 - Semiconductor devices with germanium-rich active layers and doped transition layers (2018-06-26),
11. 9691848 - Semiconductor devices with germanium-rich active layers and doped transition layers (2017-06-27),
12. 9583487 - Semiconductor device having metallic source and drain regions (2017-02-28),
13. 9490329 - Semiconductor devices with germanium-rich active layers and doped transition layers (2016-11-08),
14. 9159787 - Semiconductor devices with germanium-rich active layers and doped transition layers (2015-10-13),
15. 8748940 - Semiconductor devices with germanium-rich active layers and doped transition layers (2014-06-10),

Title: The Innovative Journey of Aaron Budrevich

Introduction: Aaron Budrevich, a talented inventor based in Portland, Oregon, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Aaron Budrevich holds several patents in various technological areas, including artificial intelligence, renewable energy, and sustainable agriculture.

Career Highlights: Throughout his career, Aaron Budrevich has been recognized for his innovative thinking and problem-solving skills. He has worked with leading tech companies to develop cutting-edge solutions that have had a positive impact on society.

Collaborations: Aaron Budrevich has collaborated with top researchers, engineers, and scientists to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Aaron Budrevich's passion for innovation and his dedication to creating a better future through technology make him a standout figure in the world of inventors. His contributions continue to inspire and drive progress in the ever-evolving tech industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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