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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11222947 B1

PDFFull Text
Date of Patent:
Jan. 11, 2022

Filed:

Sep. 25, 2015

Methods of doping fin structures of non-planar transistor devices

Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Cory E. Weber, Hillsboro, OR (US);

Aaron D. Lilak, Beaverton, OR (US);

Szuya S. Liao, Portland, OR (US);

Aaron A. Budrevich, Portland, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:

Essential Patents Group, LLP

Primary Examiner:

Trang Q Tran

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/223 (2006.01); H01L 21/225 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3115 (2006.01); H01L 29/78 (2006.01); H01L 29/775 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0638 (2013.01); H01L 21/223 (2013.01); H01L 21/2253 (2013.01); H01L 21/2254 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 21/31155 (2013.01); H01L 29/0673 (2013.01); H01L 29/66803 (2013.01); H01L 29/785 (2013.01); H01L 29/775 (2013.01);
Abstract

Methods and structures formed thereby are described relating to the doping non-planar fin structures. An embodiment of a structure includes a substrate, wherein the substrate comprises silicon, a fin on the substrate comprising a first portion and a second portion; and a dopant species, wherein the first portion comprises a first dopant species concentration, and the second portion comprises a second dopant species concentration, wherein the first dopant species concentration is substantially less than the second dopant species concentration.

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