Tzu-Chiang Chen

Tzu-Chiang Chen, an inventor from Hsinchu, TW, has made a significant contribution to the innovation and patent industry. With an impressive number of 100 patents, Chen has been leading the semiconductor industry with his innovative ideas.

Chen's latest patents include the method of manufacturing a semiconductor device and a semiconductor device. His method includes forming a fin structure with alternating first and second semiconductor layers, and forming a sacrificial gate structure over it. Later, a source/drain space is etched from the source/drain region of the fin structure, and the first semiconductor layers are laterally etched through the source/drain space. Finally, a source/drain epitaxial layer is formed in the source/drain space to cover the inner spacer.

Another notable patent of Chen's is the memory cell and the method of forming the same. The memory cell includes a first and second dielectric pattern, a first bottom electrode, a first storage pattern, and a first top electrode. The first storage pattern is electrically connected to the first bottom electrode between the first bottom electrode and the first top electrode.

Chen works in the leading semiconductor company, Taiwan Semiconductor Manufacturing Company Limited. He collaborated with his coworkers Chao-Ching Cheng and Hung-Li Chiang to bring his innovative ideas to life.

In conclusion, Tzu-Chiang Chen is a prominent figure in the field of patent and innovation. His contribution to the semiconductor industry has been recognized by various institutions worldwide. With his futuristic ideas and continuous hard work, he has proven to be an invaluable asset to Taiwan Semiconductor Manufacturing Company Limited and the innovation industry in general.