The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Jul. 27, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hung-Li Chiang, Taipei, TW;
Chao-Ching Cheng, Hsinchu, TW;
Jung-Piao Chiu, Kaohsiung, TW;
Tzu-Chiang Chen, Hsinchu, TW;
Yu-Sheng Chen, Taoyuan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Disclosed herein, in some embodiments, is a memory device. The memory device includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. An upper surface of the bottom electrode faces away from the substrate. A bottom surface of the top electrode faces the substrate. A data storage layer is arranged between the bottom electrode and the top electrode. At least a portion of the bottom surface of the top electrode does not overlap with any portion of the top surface of the bottom electrode along a first direction parallel to the bottom surface of the top electrode. Furthermore, at least a portion of the top surface of the bottom electrode does not overlap with any portion of the bottom surface of the top electrode along the first direction.