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Nippon Mining Co., Ltd.

USPTO Granted Patents = 141

CIPO Patents = 2

Trademarks = 1

Forward Citations = 1,248

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286 inventors (with patents filed for the assignee):

Chikara Tominaga (8 out of 8 patents)

Kazuhiro Saito (7 out of 14 patents)

Toshio Takada (6 out of 24 patents)

4. Hiroshi Hosaka (6 out of 6 patents)

5. Osamu Oda (5 out of 13 patents)

6. Mamoru Yamane (5 out of 5 patents)

7. Haruhito Shimakura (5 out of 5 patents)

8. Teruo Suzuka (5 out of 9 patents)

9. Shirou Aizawa (5 out of 8 patents)

10. Takashi Ogata (5 out of 6 patents)

11. Hiroshi Nakayama (4 out of 82 patents)

12. Hideo Sakuyama (4 out of 6 patents)

13. Atsushi Yoshizawa (4 out of 40 patents)

14. Kazuhiro Taki (4 out of 7 patents)

15. Keiji Kainosho (4 out of 5 patents)

Core Competencies:

III-V Compound Semiconductor

Single Crystal Substrate

Electroplating Techniques

High-Purity Copper

Magnetic Films

Thin Film Deposition

Anticoagulant Variants

Microbial Production

Zinc Coatings

Magnetoresistance Elements

Biologically Active Peptides

Noise Insulating Materials

141 patents: Sort by Forward Citations

1. 5767235 - Anticoagulant hirudin variants and methods for their production (1998-06-16),

2. 5587303 - Production process of L-amino acids with bacteria (1996-12-24),

3. 5516656 - Production of a new hirudin analog and anticoagulant pharmaceutical (1996-05-14),

4. 5474928 - Arginine deiminase from a Mycoplasma arginini strain (1995-12-12),

5. 5376539 - Process for the preparation of epoxides by means of microorganisms (1994-12-27),

6. 5362711 - Method for producing single crystal superconducting LnA.sub.2 Cu.sub.3 (1994-11-08),

7. 5336392 - Method for preparation of a Zn-Ni electroplating or hot-dip galvanizing (1994-08-09),

8. 5315282 - Magnetoresistance effect element (1994-05-24),

9. 5312503 - Laminated magnetic core and method of manufacturing same (1994-05-17),

10. 5311034 - Indium phosphide Gunn diode with dopant gradient (1994-05-10),

11. 5306696 - Method of producing YBa.sub.2 Cu.sub.4 O.sub.x -type superconducting (1994-04-26),

12. 5284977 - Process for producing high-purity organic phosphine (1994-02-08),

13. 5266127 - Epitaxial process for III-V compound semiconductor (1993-11-30),

14. 5258522 - Imidazole-silane compounds and metal surface finishing agent containing (1993-11-02),

15. 5254507 - Semi-insulating InP single crystals, semiconductor devices having (1993-10-19),

Company Overview

Nippon Mining Co., Ltd., headquartered in Tokyo, Japan, specializes in semiconductor manufacturing with a focus on advanced materials and techniques. The company is recognized for its development of III-V compound semiconductors and single crystal substrates, which are essential for high-performance electronic devices. Additionally, Nippon Mining excels in electroplating techniques and the production of high-purity copper and magnetic films. Its research extends to thin film deposition and anticoagulant variants, leveraging microbial production methods to innovate in various technological domains.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

141 Patents

#439 in Tokyo

#892 in Japan

#5,747 in the World

Nippon Mining Co., Ltd.

Forward Citations = 1,248

286 inventors:

Chikara Tominaga (8 out of 8 patents)

Kazuhiro Saito (7 out of 14 patents)

Toshio Takada (6 out of 24 patents)

4. Hiroshi Hosaka (6 out of 6 patents)

5. Osamu Oda (5 out of 13 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Nippon Mining Co., Ltd.. Retrieved from https://idiyas.com/company/nippon-mining-company

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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