The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 1994
Filed:
May. 24, 1991
Hiroshi Kurita, Toda, JP;
Akihito Yokohata, Toda, JP;
Atsushi Kodama, Toda, JP;
Kazuhiko Suga, Toda, JP;
Nippon Mining Co., Ltd., , JP;
Abstract
A Gunn diode in which the conversion efficiency can be improved without lowering the reliability, by reducing the dead zone while maintaining n.sup.+ nn.sup.+ structure. In this Gunn diode, the donor impurity concentration in the n-type active layer is graded along a direction perpendicular to a contact plane between the n-type active layer and the n.sup.+ -type layers, and an average concentration gradient of the donor impurity concentration in the n-type active layer simultaneously satisfies the following two inequalities: G>(A.sub.1 N/L)exp(-NL/S.sub.1) and G<(A.sub.2 N/L)exp(-NL/S.sub.2), where L is a thickness of the n-type active layer, N is an average concentration of the donor impurity, S.sub.1 =0.87.times.10.sup.12 cm.sup.-2 is a constant, S.sub.2 =1.32.times.10.sup.12 cm.sup.-2 is a constant, A.sub.1 =2.0 is a constant, and A.sub.2 =9.0 is a constant.