The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 30, 1993
Filed:
Oct. 22, 1991
Toyoaki Imaizumi, Toda, JP;
Mitsuaki Seiwa, Toda, JP;
Nippon Mining Co., Ltd., Tokyo, JP;
Abstract
A vapor-phase epitaxial process enabling easy growth of a III-V compound semiconductor layer including a .delta.-doped layer requires essentially no change or rearrangement of the conventional vapor-phase epitaxial reactor system but only a simple change in the method of controlling the system. The epitaxial process includes the step of feeding an epitaxial growth gas into a reactor vessel containing a III group element as a raw material and an epitaxial substrate made of a semiconductor to epitaxially grow a layer made of a III-V compound semiconductor on the substrate by the chloride CVD process. The epitaxial process also includes the steps of displacing the gas in the reactor vessel with an inert gas, feeding an epitaxial growth gas consisting of a chloride of a V group element and a carrier gas to grow a buffer layer on the substrate, interrupting the epitaxial growth gas feeding step, feeding only the carrier gas to a boat for raw material in the reactor vessel for causing a melt of the III group element to appear on the surface of a melt in the boat, and feeding the epitaxial growth gas to the substrate to grow a semiconductor layer doped by an impurity in a .delta.-function deposition profile.