The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 1993
Filed:
Sep. 11, 1992
Applicant:
Inventors:
Assignee:
Nippon Mining Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
437247 ; 437239 ; 148 336 ; 148D / ;
Abstract
A semi-insulating InP single crystal, semiconductor device with a substrate of crystal and processes of producing the same are disclosed. Crystal is derived from an undoped InP single crystal intermediate. The intermediate has a concentration of all native Fe, Co and Cr of 0.05 ppmw. The crystal has a resistivity of 1.times.10.sup.6 .OMEGA..multidot.cm or more and a mobility of above 3,000 cm.sup.2 /V.multidot.s both at 300K. A process of producing the crystal includes a step of heat-treating the intermediate under 6 kg/cm.sup.2 of phosphorus vapor pressure. The produced semiconductor device is a MIS device operating in essentially the same high-speed manner as a HEMT.