For the Inventor, By the Inventor

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Guangdong, China

Jsab Technologies (Shenzhen) Ltd.

USPTO Granted Patents = 5

Forward Citations = 0

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5 inventors (with patents filed for the assignee):

Hao Feng (5 out of 7 patents)

Yong Liu (5 out of 57 patents)

Johnny Kin On Sin (5 out of 5 patents)

4. Xin Peng (2 out of 5 patents)

5. Jing Deng (1 out of 1 patent)

5 patents: Sort by Forward Citations

1. 12501646 - Pi-type trench gate silicon carbide MOSFET device and fabrication method thereof (2025-12-16),

2. 12408398 - Power semiconductor device and preparation method thereof (2025-09-02),

3. 12363930 - Electron extraction type free-wheeling diode device and preparation method thereof (2025-07-15),

4. 12237410 - Trench gate silicon carbide MOSFET device and fabrication method thereof (2025-02-25),

5. 11967631 - Power semiconductor device and manufacturing method thereof (2024-04-23),

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USPTO Data Jan 1 1976 - Jan 6 2026

5 Patents

#186 in Guangdong

#4,601 in China

Guangdong, China

Jsab Technologies (Shenzhen) Ltd.

Forward Citations = 0

5 inventors:

Hao Feng (5 out of 7 patents)

Yong Liu (5 out of 57 patents)

Johnny Kin On Sin (5 out of 5 patents)

4. Xin Peng (2 out of 5 patents)

5. Jing Deng (1 out of 1 patent)

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