The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Dec. 21, 2022
Applicant:

Jsab Technologies (Shenzhen) Ltd., Shenzhen, CN;

Inventors:

Hao Feng, Shenzhen, CN;

Yong Liu, Shenzhen, CN;

Johnny Kin On Sin, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/3065 (2006.01); H10D 8/01 (2025.01); H10D 62/10 (2025.01);
U.S. Cl.
CPC ...
H10D 8/605 (2025.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/30655 (2013.01); H10D 8/051 (2025.01); H10D 62/109 (2025.01); H10D 62/117 (2025.01);
Abstract

An electron extraction type free-wheeling diode device and a preparation method thereof are provided by the present disclosure, and more than one first structures for increasing the density of electron extraction pathways are provided on a N-type drift region. Each of the first structures includes a lightly doped P-type base region, a heavily doped N-type emitter region located on the lightly doped P-type base region, a P-type trench anode region, and a trench region located on the P-type trench anode region. The barrier height of the punch-through NPN triode can be tuned in a wide range, which has beneficial effects on soft and fast adjustment of the reverse recovery process.


Find Patent Forward Citations

Loading…