Hao Feng

Title: Hao Feng: Innovator in Power Semiconductor Devices

Introduction

Hao Feng is a prominent inventor based in Shenzhen, China, known for his contributions to the field of power semiconductor devices. With a total of 6 patents to his name, he has made significant advancements that enhance the efficiency and design flexibility of semiconductor technologies.

Latest Patents

Hao Feng's latest patents include a power semiconductor device and its preparation method. This invention introduces a punch-through triode structure for electron extraction in a drift region. By doing so, it reduces the frontside hole injection efficiency and converts hole currents from emitters into electron drift currents without significantly increasing the on-state voltage drop. Additionally, the method allows for adjustments in the density and topography of a frontside trench, which changes the electron extraction and frontside hole injection efficiency, thereby increasing design flexibility.

Another notable patent is the electron extraction type free-wheeling diode device and its preparation method. This invention features multiple first structures that enhance the density of electron extraction pathways on an N-type drift region. Each structure includes a lightly doped P-type base region and a heavily doped N-type emitter region, which together allow for a wide range of tuning of the barrier height of the punch-through NPN triode. This innovation has beneficial effects on the soft and fast adjustment of the reverse recovery process.

Career Highlights

Hao Feng has worked with notable companies such as Jsab Technologies (Shenzhen) Ltd. and Tencent Technology (Shenzhen) Company Limited. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Hao Feng has collaborated with talented individuals in his field, including Yong Liu and Johnny Kin On Sin. These partnerships have likely fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Hao Feng's contributions to power semiconductor devices demonstrate his innovative spirit and commitment to advancing technology. His patents reflect a deep understanding of semiconductor principles and a drive to improve device performance.