The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 02, 2025

Filed:

Jan. 10, 2023
Applicant:

Jsab Technologies (Shenzhen) Ltd., Shenzhen, CN;

Inventors:

Yong Liu, Shenzhen, CN;

Hao Feng, Shenzhen, CN;

Johnny Kin On Sin, Shenzhen, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/17 (2025.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01); H10D 12/01 (2025.01);
U.S. Cl.
CPC ...
H10D 62/177 (2025.01); H10D 8/00 (2025.01); H10D 12/038 (2025.01); H10D 12/481 (2025.01);
Abstract

Disclosed are a power semiconductor device and a preparation method thereof, which belongs to the field of power semiconductor devices. By introducing a punch-through triode structure for electron extraction in a drift region, the frontside hole injection efficiency is reduced, and hole currents from emitters are converted into electron drift currents without significantly increasing on-state voltage drop. In addition, by changing the density and topography of a frontside trench, the adjustment of punch-through area and position is achieved, which in turn changes the electron extraction and frontside hole injection efficiency. The disclosed method increases the design flexibility and design dimension of the device.


Find Patent Forward Citations

Loading…