The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
Nov. 05, 2024
Jsab Technologies (Shenzhen) Ltd., Shenzhen, CN;
Yong Liu, Shenzhen, CN;
Hao Feng, Shenzhen, CN;
Xin Peng, Shenzhen, CN;
Johnny Kin On Sin, Shenzhen, CN;
JSAB TECHNOLOGIES (SHENZHEN) LTD., Shenzhen, CN;
Abstract
A trench gate silicon carbide metal oxide semiconductor field effect transistor (MOSFET) device and a fabrication method thereof. A second conductive heavily doped layer at the bottom corner of a trench gate is electrically connected to a second conductive heavily doped layer on another side edge of the trench gate through a layout design, which ensures a ground potential during voltage blocking state. This design protects the insulating layer in the trench gate and the Schottky contact in a junction barrier Schottky (JBS) diode, thereby enhancing device reliability. Moreover, in a diode operating mode, P+ on the left and right sides of the trench gate are connected to a positive potential. When the P+/N− junction is activated, the conductivity modulation can be implemented through hole injection, thereby improving the device's ability to withstand surge current impacts.