Shenzhen, China

Jing Deng

This inventor holds 1 USPTO granted patent. Top assignee: Jsab Technologies (Shenzhen) Ltd.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jing Deng. Retrieved from https://idiyas.com/inventor/jing-deng-9kvmfd6m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Jing Deng - Innovator in Power Semiconductor Technology

Introduction

Jing Deng is a prominent inventor based in Shenzhen, China. She has made significant contributions to the field of power semiconductor devices. Her innovative approach focuses on enhancing device performance while minimizing costs.

Latest Patents

Jing Deng holds a patent for a "Power semiconductor device and manufacturing method thereof." This invention aims to provide a power semiconductor device with improved latch-up immunity without increasing power loss and costs. The design includes a hole current path in a fourth semiconductor region, which is optimized to suppress the latch-up effect and enhance switching reliability.

Career Highlights

Jing Deng is associated with Jsab Technologies (Shenzhen) Ltd., where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the company's product offerings and technological capabilities.

Collaborations

Jing collaborates with talented coworkers, including Hao Feng and Yong Liu, who contribute to her projects and innovations. Their teamwork fosters a creative environment that drives technological advancements.

Conclusion

Jing Deng's contributions to power semiconductor technology exemplify her commitment to innovation and excellence. Her patent reflects her ability to solve complex engineering challenges while maintaining cost-effectiveness.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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