For the Inventor, By the Inventor

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Belmont, MA, United States of America

Finwave Semiconductor, Inc.

USPTO Granted Patents = 3

Forward Citations = 0

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5 inventors (with patents filed for the assignee):

Bin Lu (3 out of 19 patents)

Dongfei Pei (3 out of 3 patents)

Hal Emmer (1 out of 1 patent)

4. Mark Dipsey (1 out of 1 patent)

5. Xiabing Lou (1 out of 1 patent)

3 patents: Sort by Forward Citations

1. 12080807 - III-nitride diode with a modified access region (2024-09-03),

2. 11876130 - III-nitride transistor with a modified drain access region (2024-01-16),

3. 11695052 - III-Nitride transistor with a cap layer for RF operation (2023-07-04),

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USPTO Data Jan 1 1976 - Sep 22 2026

3 Patents

#17 in Belmont, MA

#3,959 in Massachusetts

#73,716 in US

Belmont, MA, United States of America

Finwave Semiconductor, Inc.

Forward Citations = 0

5 inventors:

Bin Lu (3 out of 19 patents)

Dongfei Pei (3 out of 3 patents)

Hal Emmer (1 out of 1 patent)

4. Mark Dipsey (1 out of 1 patent)

5. Xiabing Lou (1 out of 1 patent)

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