Dongfei Pei

Title: Innovations of Dongfei Pei in III-Nitride Semiconductor Technology

Introduction

Dongfei Pei is a notable inventor based in Waban, MA (US), recognized for his contributions to the field of semiconductor technology. He holds three patents that focus on enhancing the performance of III-nitride diodes and transistors. His work is pivotal in advancing the efficiency and functionality of electronic devices.

Latest Patents

One of Dongfei Pei's latest patents is for a III-nitride diode with a modified access region. This patent describes a structure and technology aimed at modifying the free electron density between the anode and cathode electrodes of III-nitride semiconductor diodes. The invention includes electron density reduction regions (EDR regions) that are strategically placed between the anode and cathode electrodes. These EDR regions can be created using trenches or by implanting regions with a species that reduces free electrons in the channel layer. Additionally, a cap layer may be formed over the barrier layer to further reduce free electrons beneath it.

Another significant patent by Pei is for a III-nitride transistor with a modified drain access region. This invention outlines a method to alter the free electron density between the gate and drain electrodes of III-nitride semiconductor transistors. Similar to his diode patent, EDR regions are utilized in this structure as well. These regions can be formed using trenches or by implanting species that reduce free electrons. The cap layer concept is also applied here, enhancing the transistor's performance.

Career Highlights

Dongfei Pei is currently employed at Finwave Semiconductor, Inc., where he continues to innovate in the semiconductor field. His work has significantly impacted the development of advanced electronic components, making them more efficient and reliable.

Collaborations

Throughout his career, Dongfei Pei has collaborated with talented individuals such as Bin Lu and Xiabing Lou. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Dongfei Pei's contributions to III-nitride semiconductor technology through his patents demonstrate his expertise and commitment to advancing electronic devices. His work continues to influence the industry and pave the way for future innovations.