Hal Emmer

Title: Hal Emmer: Innovator in III-Nitride Transistor Technology

Introduction

Hal Emmer is a notable inventor based in Wayland, MA (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on III-Nitride transistors. His expertise and creativity have led to advancements that enhance the performance of electronic devices.

Latest Patents

Hal Emmer holds a patent for a III-Nitride transistor with a cap layer for RF operation. This patent describes a transistor structure that improves performance by reducing the off-state capacitance between the source and drain. The design incorporates a cap layer that extends the electrical distance between the gate and the source and drain contacts. In certain embodiments, a dielectric layer is placed between the gate electrode and the cap layer, with vias created to allow contact at select locations. The configuration of the gate electrode can also be adjusted to optimize the design further.

Career Highlights

Hal Emmer is currently associated with Finwave Semiconductor, Inc., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing transistors that are more efficient and effective for various applications.

Collaborations

Hal has collaborated with talented individuals such as Bin Lu and Dongfei Pei, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Hal Emmer's contributions to III-Nitride transistor technology exemplify the impact of innovative thinking in the semiconductor industry. His work not only enhances device performance but also paves the way for future advancements in electronics.