Mark Dipsey

Title: Mark Dipsey: Innovator in III-Nitride Transistor Technology

Introduction

Mark Dipsey is a notable inventor based in Somerville, MA (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on III-Nitride transistors. His expertise and dedication to advancing technology have led to the development of a unique patent that enhances the performance of transistors.

Latest Patents

Mark Dipsey holds a patent for a III-Nitride transistor with a cap layer for RF operation. This patent describes a transistor structure that improves performance by reducing the off-state capacitance between the source and drain. The innovation involves using a cap layer to extend the electrical distance between the gate and the source and drain contacts. In certain embodiments, a dielectric layer is placed between the gate electrode and the cap layer, with vias created in the dielectric layer to allow the gate electrode to contact the cap layer at select locations. Additionally, the design allows for a more narrow cap layer and provides extra space between the gate electrode and the drain contact, facilitating the inclusion of a field plate.

Career Highlights

Mark Dipsey is currently associated with Finwave Semiconductor, Inc., where he continues to push the boundaries of semiconductor technology. His work has garnered attention for its potential applications in various electronic devices, making significant strides in the industry.

Collaborations

Mark has collaborated with talented individuals such as Bin Lu and Dongfei Pei, contributing to a dynamic work environment that fosters innovation and creativity.

Conclusion

Mark Dipsey's contributions to III-Nitride transistor technology exemplify the spirit of innovation in the semiconductor industry. His patent reflects a commitment to enhancing electronic performance, and his work continues to influence the field positively.