The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2018
Filed:
Sep. 17, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Mill-Jer Wang, Hsin-Chu, TW;
Ching-Nen Peng, Hsin-Chu, TW;
Hung-Chih Lin, Hsin-Chu, TW;
Hao Chen, New Taipei, TW;
Mincent Lee, Taipei, TW;
Chen-Hung Tien, Hsin-Chu, TW;
Chang Chia How, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of probe testing dies, the method includes loading a wafer having a first die and a second die into a prober and bringing probes of the prober into contact with first contact pads of the first die according to first probe parameters. A first probe contact test of first values of the contact between the probes and the first contact pads is performed, and a die test of the first die is performed after performing the probe contact test. Results of the die test and results of the probe contact test are saved and second probe parameters are automatically generated based on at least the results of the first probe contact test.