The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Oct. 30, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Jung Wei Cheng, Hsin-Chu, TW;

Hai-Ming Chen, Hsin-Chu, TW;

Chien-Hsun Lee, Hsin-Chu, TW;

Hao-Cheng Hou, Hsin-Chu, TW;

Hung-Jen Lin, Hsin-Chu, TW;

Chun-Chih Chuang, Hsin-Chu, TW;

Ming-Che Liu, Hsin-Chu, TW;

Tsung-Ding Wang, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/31 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 25/065 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 24/03 (2013.01); H01L 21/31 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/32051 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 24/09 (2013.01); H01L 25/0657 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/03502 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/0812 (2013.01); H01L 2224/0903 (2013.01); H01L 2225/06548 (2013.01);
Abstract

Methods of forming connectors and packaged semiconductor devices are disclosed. In some embodiments, a connector is formed by forming a first photoresist layer over an interconnect structure, and patterning the first photoresist layer with a pattern for a first portion of a connector. A first metal layer is plated through the patterned first photoresist layer to form the first portion of the connector which has a first width. A second photoresist layer is formed over the interconnect structure and the first portion of the connector. The second photoresist layer is patterned with a pattern for a second portion of the connector. A second metal layer is plated through the patterned second photoresist layer to form the second portion of the connector over the first portion of the connector. The second portion of the connector has a second width, the second width being less than the first width.


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