The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Aug. 28, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yung-Chi Lin, Su-Lin, TW;
Yen-Hung Chen, Hsinchu, TW;
Yin-Hua Chen, Yuanlin Township, TW;
Ebin Liao, Xinzhu, TW;
Ku-Feng Yang, Dali, TW;
Tsang-Jiuh Wu, Hsin-Chu, TW;
Wen-Chih Chiou, Zhunan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.