The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 06, 2016

Filed:

Dec. 30, 2011
Applicants:

Deyan Wang, Hudson, MA (US);

Shintaro Yamada, Shrewsbury, MA (US);

Cong Liu, Shrewsbury, MA (US);

Mingqi LI, Shrewsbury, MA (US);

Joon-seok OH, Natick, MA (US);

Chunyi Wu, Shrewsbury, MA (US);

Doris Kang, Shrewsbury, MA (US);

Cheng-bai Xu, Southboro, MA (US);

Inventors:

Deyan Wang, Hudson, MA (US);

Shintaro Yamada, Shrewsbury, MA (US);

Cong Liu, Shrewsbury, MA (US);

Mingqi Li, Shrewsbury, MA (US);

Joon-Seok Oh, Natick, MA (US);

Chunyi Wu, Shrewsbury, MA (US);

Doris Kang, Shrewsbury, MA (US);

Cheng-Bai Xu, Southboro, MA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/30 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0046 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/30 (2013.01);
Abstract

New photoresist compositions are provided that comprise one or more materials that have base-reactive groups and are particularly useful for dry lithography. Particularly preferred photoresists of the invention can exhibit reduced defects following development of a coating layer of the resist.


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