The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2016
Filed:
Dec. 21, 2012
Intel Corporation, Santa Clara, CA (US);
Benjamin Chu-Kung, Hillsboro, OR (US);
Van H. Le, Beaverton, OR (US);
Robert S. Chau, Portland, OR (US);
Sansaptak Dasgupta, Hillsboro, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Niti Goel, Austin, TX (US);
Jack T. Kavalieros, Portland, OR (US);
Matthew V. Metz, Portland, OR (US);
Niloy Mukherjee, Beaverton, OR (US);
Ravi Pillarisetty, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Marko Radosavljevic, Beaverton, OR (US);
Han Wui Then, Portland, OR (US);
Nancy M. Zelick, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
An embodiment concerns forming an EPI film on a substrate where the EPI film has a different lattice constant from the substrate. The EPI film and substrate may include different materials to collectively form a hetero-epitaxial device having, for example, a Si and/or SiGe substrate and a III-V or IV film. The EPI film may be one of multiple EPI layers or films and the films may include different materials from one another and may directly contact one another. Further, the multiple EPI layers may be doped differently from another in terms of doping concentration and/or doping polarity. One embodiment includes creating a horizontally oriented hetero-epitaxial structure. Another embodiment includes a vertically oriented hetero-epitaxial structure. The hetero-epitaxial structures may include, for example, a bipolar junction transistor, heterojunction bipolar transistor, thyristor, and tunneling field effect transistor among others. Other embodiments are described herein.