The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 19, 2016

Filed:

May. 31, 2013
Applicants:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Dow Global Technologies Llc, Midland, MI (US);

Inventors:

Bainian Qian, Newark, DE (US);

Michelle K. Jensen, Newark, PA (US);

Marty W. DeGroot, Middletown, DE (US);

Angus Repper, Lincoln University, PA (US);

James Murnane, Norristown, PA (US);

Jeffrey James Hendron, Elkton, MD (US);

John G. Nowland, Elkton, MD (US);

David B. James, Newark, DE (US);

Fengji Yeh, Wilmington, DE (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B24B 37/24 (2012.01); C08G 18/32 (2006.01); C08G 18/66 (2006.01); B24D 11/00 (2006.01); B24B 37/20 (2012.01); B24B 37/22 (2012.01);
U.S. Cl.
CPC ...
B24B 37/245 (2013.01); B24B 37/205 (2013.01); B24B 37/22 (2013.01); B24D 11/001 (2013.01); C08G 18/3278 (2013.01); C08G 18/6644 (2013.01);
Abstract

A chemical mechanical polishing pad is provided containing: a polishing layer; a plug in place endpoint detection window block; a rigid layer; and, a hot melt adhesive bonding the polishing layer to the rigid layer; wherein the polishing layer comprises the reaction product of ingredients, including: a polyfunctional isocyanate; and, a curative package; wherein the curative package contains an amine initiated polyol curative and a high molecular weight polyol curative; wherein the polishing layer exhibits a density of greater than 0.6 g/cm; a Shore D hardness of 5 to 40; an elongation to break of 100 to 450%; and, a cut rate of 25 to 150 μm/hr; and, wherein the polishing layer has a polishing surface adapted for polishing the substrate. Also provide are methods of making and using the chemical mechanical polishing pad.


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