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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9153441 B1

PDFFull Text
Date of Patent:
Oct. 06, 2015

Filed:

Feb. 19, 2014

Methods for forming doped silicon oxide thin films

Applicant:

Asm International. N.v., Almere, NL;

Inventors:

Noboru Takamure, Tokyo, JP;

Atsuki Fukazawa, Tokyo, JP;

Hideaki Fukuda, Tokyo, JP;

Antti Niskanen, Helsinki, FI;

Suvi Haukka, Helsinki, FI;

Ryu Nakano, Tokyo, JP;

Kunitoshi Namba, Tokyo, JP;

Assignee:

ASM International, N.V., , NL;

Attorney:

Knobbe, Martens, Olson & Bear LLP

Primary Examiner:

Anthony Ho

Int. Cl.
CPC ...
H01L 21/225 (2006.01); H01L 21/02 (2006.01); H01L 21/22 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2255 (2013.01); H01L 21/0228 (2013.01); H01L 21/02129 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/02274 (2013.01); H01L 21/2225 (2013.01); H01L 21/324 (2013.01);
Abstract

The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.

Published as:
US2013115763A1; KR20130049752A; TW201326448A; US8679958B2; US2015017794A1; US2015147875A1; US9153441B2; US9368352B2; US2016196970A1; TWI541377B; TW201627520A; US9564314B2; TWI606136B; US2017338111A1; TW201802285A; US9875893B2; TWI627303B; US2018211834A1; US10147600B2; KR101950909B1; KR20190019979A; US2019172708A1; KR102035701B1; KR20190120151A; US10510530B2; KR102103800B1; US2020185218A1; US10784105B2; US2020388487A1; US11302527B2; US2023031720A1;

Find Patent Forward Citations

Takamure, Noboru. (2015). Methods for forming doped silicon oxide thin films (U.S. Patent No. 9153441). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9153441

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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