The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2014

Filed:

Jan. 16, 2013
Applicant:

Kla-tencor Corporation, Milpitas, CA (US);

Inventors:

Thaddeus Gerard Dziura, San Jose, CA (US);

Xuefeng Liu, San Jose, CA (US);

David Y. Wang, Santa Clara, CA (US);

Jonathan Madsen, Los Altos, CA (US);

Alexander Kuznetsov, Mountain View, CA (US);

Johannes D. de Veer, Menlo Park, CA (US);

Shankar Krishnan, Santa Clara, CA (US);

Derrick Shaughnessy, San Jose, CA (US);

Andrei Shchegrov, Campbell, CA (US);

Assignee:

KLA-Tencor Corp., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 21/00 (2006.01); G01N 21/47 (2006.01);
U.S. Cl.
CPC ...
G01N 21/47 (2013.01);
Abstract

Various metrology systems and methods for high aspect ratio and large lateral dimension structures are provided. One method includes directing light to one or more structures formed on a wafer. The light includes ultraviolet light, visible light, and infrared light. The one or more structures include at least one high aspect ratio structure or at least one large lateral dimension structure. The method also includes generating output responsive to light from the one or more structures due to the light directed to the one or more structures. In addition, the method includes determining one or more characteristics of the one or more structures using the output.


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