The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Apr. 28, 2008
Mehran Nasser-ghodsi, Hamilton, MA (US);
Mark Borowicz, San Jose, CA (US);
Dave Bakker, Cupertino, CA (US);
Mehdi Vaez-iravani, Los Gatos, CA (US);
Prashant Aji, San Jose, CA (US);
Rudy Garcia, Union City, CA (US);
Tzu Chin Chuang, Cupertino, CA (US);
Mehran Nasser-Ghodsi, Hamilton, MA (US);
Mark Borowicz, San Jose, CA (US);
Dave Bakker, Cupertino, CA (US);
Mehdi Vaez-Iravani, Los Gatos, CA (US);
Prashant Aji, San Jose, CA (US);
Rudy Garcia, Union City, CA (US);
Tzu Chin Chuang, Cupertino, CA (US);
KLA-Tencor Technologies Corp., Milpitas, CA (US);
Abstract
Methods and systems for measuring a characteristic of a substrate or preparing a substrate for analysis are provided. One method for measuring a characteristic of a substrate includes removing a portion of a feature on the substrate using an electron beam to expose a cross-sectional profile of a remaining portion of the feature. The feature may be a photoresist feature. The method also includes measuring a characteristic of the cross-sectional profile. A method for preparing a substrate for analysis includes removing a portion of a material on the substrate proximate to a defect using chemical etching in combination with an electron beam. The defect may be a subsurface defect or a partially subsurface defect. Another method for preparing a substrate for analysis includes removing a portion of a material on a substrate proximate to a defect using chemical etching in combination with an electron beam and a light beam.