The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2014
Filed:
Jun. 01, 2012
Ken Wu, Jhubei, TW;
Hung-chang Hsieh, Hsin-Chu, TW;
Chang-cheng Hung, Jhubei, TW;
Luke Hsu, Hsinchu, TW;
Ren-guey Hsieh, Baoshan Township, TW;
Hsin-chang Lee, Zhubei, TW;
Chia-jen Chen, Jhudong Township, TW;
Ken Wu, Jhubei, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Chang-Cheng Hung, Jhubei, TW;
Luke Hsu, Hsinchu, TW;
Ren-Guey Hsieh, Baoshan Township, TW;
Hsin-Chang Lee, Zhubei, TW;
Chia-Jen Chen, Jhudong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.