The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2012
Filed:
Dec. 19, 2008
Hui W. Chen, San Jose, CA (US);
Chorng-ping Chang, Saratoga, CA (US);
Yongmei Chen, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
Jiahua Yu, Milpitas, CA (US);
Susie X. Yang, Sunnyvale, CA (US);
Xumou Xu, Campbell, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Raymond Hoiman Hung, Cupertino, CA (US);
Michael P. Duane, Santa Clara, CA (US);
Christopher Siu Wing Ngai, Burlingame, CA (US);
Jen Shu, Saratoga, CA (US);
Kenneth Macwilliams, Los Altos Hills, CA (US);
Hui W. Chen, San Jose, CA (US);
Chorng-Ping Chang, Saratoga, CA (US);
Yongmei Chen, San Jose, CA (US);
Huixiong Dai, San Jose, CA (US);
Jiahua Yu, Milpitas, CA (US);
Susie X. Yang, Sunnyvale, CA (US);
Xumou Xu, Campbell, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Raymond Hoiman Hung, Cupertino, CA (US);
Michael P. Duane, Santa Clara, CA (US);
Christopher Siu Wing Ngai, Burlingame, CA (US);
Jen Shu, Saratoga, CA (US);
Kenneth MacWilliams, Los Altos Hills, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods to pattern features in a substrate layer by exposing a photoresist layer more than once. In one embodiment, a single reticle may be exposed more than once with an overlay offset implemented between successive exposures to reduce the half pitch of the reticle. In particular embodiments, these methods may be employed to reduce the half pitch of the features printed with 65 nm generation lithography equipment to achieve 45 nm lithography generation CD and pitch performance.