Chorng-Ping Chang

Title: Innovations by Chorng-Ping Chang

Introduction

Chorng-Ping Chang is a notable inventor based in Saratoga, CA, who has made significant contributions to the field of semiconductor technology. He holds a total of five patents, showcasing his expertise and innovative spirit in the industry.

Latest Patents

Among his latest patents is a method of fabricating a gate-all-around word line for a vertical channel DRAM. This method involves creating a self-aligned buried wordline in a structure that includes a self-aligned buried bit line. The innovative materials and processes used in this method allow for the self-alignment of elements during fabrication. Additionally, it enables the formation of individual DRAM cells with a buried bit line width of 16 nm or less and a perpendicular buried wordline width of 24 nm or less. Another significant patent is the method of fabricating a self-aligned buried bit line for a vertical channel DRAM. This method also focuses on self-alignment during the fabrication process and allows for the creation of individual DRAM cells with a buried bit line width of 16 nm or less.

Career Highlights

Chorng-Ping Chang is currently employed at Applied Materials, Inc., a leading company in the semiconductor manufacturing equipment industry. His work at Applied Materials has positioned him as a key player in advancing DRAM technology.

Collaborations

Chorng-Ping Chang has collaborated with notable colleagues, including Er-Xuan Ping and Bingxi Sun Wood. Their combined efforts contribute to the innovative projects within the semiconductor field.

Conclusion

Chorng-Ping Chang's contributions to semiconductor technology through his patents and work at Applied Materials, Inc. highlight his role as a significant inventor in the industry. His innovative methods for fabricating DRAM structures demonstrate his commitment to advancing technology.