The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2009
Filed:
Jul. 25, 2006
Rajesh Kanuri, Santa Clara, CA (US);
Chorng-ping Chang, Saratoga, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Hoiman Hung, Cupertino, CA (US);
Rajesh Kanuri, Santa Clara, CA (US);
Chorng-Ping Chang, Saratoga, CA (US);
Christopher Dennis Bencher, San Jose, CA (US);
Hoiman Hung, Cupertino, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A gate hard mask is deposited on a gate structure using low pressure chemical vapor deposition (LPCVD). By doing so, the wet etch removal ratio (WERR) of the gate hard mask relative to the underlying polysilicon gate layer is increased when compared to prior art hard masks. The LPCVD gate hard mask will not only etch faster than prior art hard masks, but it will also reduce undercutting of the gate oxide. To provide additional control of the wet etch rate, the LPCVD hard mask can be annealed. The annealing can be tailored to achieve the desired etching rate.