The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Feb. 15, 2005
Kiyotaka Ishibashi, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Singo Furui, Amagasaki, JP;
Cai Zhong Tian, Amagasaki, JP;
Jun Yamashita, Amagasaki, JP;
Nobuhiko Yamamoto, Amagasaki, JP;
Tetsuya Nishizuka, Amagasaki, JP;
Toshihisa Nozawa, Amagasaki, JP;
Shinya Nishimoto, Amagasaki, JP;
Tamaki Yuasa, Amagasaki, JP;
Kiyotaka Ishibashi, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Singo Furui, Amagasaki, JP;
Cai Zhong Tian, Amagasaki, JP;
Jun Yamashita, Amagasaki, JP;
Nobuhiko Yamamoto, Amagasaki, JP;
Tetsuya Nishizuka, Amagasaki, JP;
Toshihisa Nozawa, Amagasaki, JP;
Shinya Nishimoto, Amagasaki, JP;
Tamaki Yuasa, Amagasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
In a plasma processing apparatus that processes a wafer in a process vessel by plasma generated by the supply of a microwave, a transmissive window has, in a center area of its lower surface, a hanging portion made of the same material as a material of the transmissive window. Between an outer peripheral surface of the hanging portion and a sidewall inner surface continuing from a support part, a gap is formed, the gap having a gap length of 0.5 to 10 mm, more preferably 0.5 to 5 mm. The generation of a strong electric field and plasma at a contact point is inhibited and an amount of sputtered particles, radicals, or the like reaching the wafer is also reduced.