The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2012
Filed:
Oct. 31, 2006
Ken Wu, Jhubei, TW;
Hung-chang Hsieh, Hsin-Chu, TW;
Chang-cheng Hung, Jubei, TW;
Luke Hsu, Hsinchu, TW;
Ren-guey Hsieh, Baoshan Township, Hsinchu County, TW;
Hsin-chang Lee, Zhubei, TW;
Chia-jen Chen, Jhudong Township, Hsinchu County, TW;
Ken Wu, Jhubei, TW;
Hung-Chang Hsieh, Hsin-Chu, TW;
Chang-Cheng Hung, Jubei, TW;
Luke Hsu, Hsinchu, TW;
Ren-Guey Hsieh, Baoshan Township, Hsinchu County, TW;
Hsin-Chang Lee, Zhubei, TW;
Chia-Jen Chen, Jhudong Township, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Co., Hsin-Chu, TW;
Abstract
A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.