The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2007
Filed:
Sep. 08, 2004
Kazuya Kato, Nirasaki, JP;
Katsuhiko Ono, Nirasaki, JP;
Hideki Mizuno, Nirasaki, JP;
Masahiro Ogasawara, Nirasaki, JP;
Akinori Kitamura, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Yasushi Inata, Nirasaki, JP;
Shin Okamoto, Nirasaki, JP;
Kazuya Kato, Nirasaki, JP;
Katsuhiko Ono, Nirasaki, JP;
Hideki Mizuno, Nirasaki, JP;
Masahiro Ogasawara, Nirasaki, JP;
Akinori Kitamura, Nirasaki, JP;
Noriyuki Kobayashi, Nirasaki, JP;
Yasushi Inata, Nirasaki, JP;
Shin Okamoto, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.