The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2004
Filed:
Dec. 10, 2002
Applicant:
Inventors:
Christopher G. Parker, Portland, OR (US);
Markus Kuhn, Hillsboro, OR (US);
Ying Zhou, Tigard, OR (US);
Scott A. Hareland, Tigard, OR (US);
Suman Datta, Beaverton, OR (US);
Nick Lindert, Beaverton, OR (US);
Robert S. Chau, Beaverton, OR (US);
Timothy E. Glassman, Portland, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Sunit Tyagi, Portland, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ;
U.S. Cl.
CPC ...
H01L 2/14763 ;
Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a buffer layer and a high-k gate dielectric layer, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate dielectric layer.