The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 11, 2002
Filed:
Nov. 01, 2000
Jingbao Liu, Sunnyvale, CA (US);
Judy Wang, Cupertino, CA (US);
Takehiko Komatsu, Santa Clara, CA (US);
Bryan Y Pu, San Jose, CA (US);
Kenny L Doan, San Jose, CA (US);
Claes Bjorkman, Mountain View, CA (US);
Melody Chang, Union City, CA (US);
Yunsang Kim, San Jose, CA (US);
Hongching Shan, Cupertino, CA (US);
Ruiping Wang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include hydrocarbons, oxygen and inert gas. Explanation is provided for enablling the use of hexafluoro-1,3-butadiene in a capacitively coupled etch plasma. The method is very useful for creating via, self aligned contacts, dual damascene, and other dielectric etch.