Hongching Shan

Title: Hongching Shan: Innovator in Plasma Technology

Introduction

Hongching Shan is a prolific inventor based in San Jose, CA, recognized for his significant contributions to plasma technology. With a remarkable portfolio of 34 patents, he has been instrumental in advancing processes that enhance uniformity in etching and chemical vapor deposition (CVD).

Latest Patents

His latest patent focuses on a "Slotted Electrostatic Shield Modification for Improved Etch and CVD Process Uniformity." This innovative approach implements a more uniform plasma process for treating a treatment object utilizing an inductively coupled plasma source. The invention addresses the challenge posed by an asymmetric plasma density pattern at the treatment surface through the introduction of a slotted electrostatic shield with uniformly spaced-apart slots. This modification compensates for the density pattern, providing a refined plasma density profile and enabling a more uniform radial plasma process. The system is tailored to produce a modified radial variation characteristic across the treatment surface, thus enhancing the efficiency of plasma technologies.

Career Highlights

Throughout his career, Hongching Shan has worked at notable companies, including Applied Materials, Inc. His tenure in these organizations has allowed him to refine his innovative techniques and share his expertise in the field of plasma technology.

Collaborations

He has collaborated with esteemed colleagues such as Michael D Welch and Bryan Y Pu. These partnerships reflect a commitment to advancing technological boundaries through teamwork and collective expertise.

Conclusion

Hongching Shan's contributions to plasma technology underscore his status as a leader in innovation. With his extensive patent portfolio and collaborative efforts, he continues to pave the way for advancements in etching and CVD processes, making a significant impact on the industry.