The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2004
Filed:
Sep. 24, 2002
James D Carducci, Sunnyvale, CA (US);
Hamid Noorbakhsh, Fremont, CA (US);
Evans Y Lee, Milpitas, CA (US);
Bryan Y Pu, San Jose, CA (US);
Hongching Shan, Cupertino, CA (US);
Claes Bjorkman, Mountain View, CA (US);
Siamak Salimian, Sunnyvale, CA (US);
Paul E Luscher, Sunnyvale, CA (US);
Michael D Welch, Pleasanton, CA (US);
Applied Materials Inc., Santa Clara, CA (US);
Abstract
A capacitively coupled reactor for plasma etch processing of substrates at subatmospheric pressures includes a chamber body defining a processing volume, a lid provided upon the chamber body, the lid being a first electrode, a substrate support provided in the processing volume and comprising a second electrode, a radio frequency source coupled at least to one of the first and second electrodes, a process gas inlet configured to deliver process gas into the processing volume, and an evacuation pump system having pumping capacity of at least 1600 liters/minute. The greater pumping capacity controls residency time of the process gases so as to regulate the degree of dissociation into more reactive species.