The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Jul. 26, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Jr-Sheng Chen, Hsinchu, TW;
An-Chi Li, Hsin-Chu, TW;
Shih-Che Huang, Zhubei, TW;
Chih-Hsien Hsu, Hsinchu, TW;
Zhi-Hao Huang, Hsin-Chu, TW;
Alex Wang, Hsin-Chu, TW;
Yu-Pei Chiang, Hsinchu, TW;
Chun Yan Chen, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.