The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
Jun. 25, 2021
Intel Corporation, Santa Clara, CA (US);
Leonard Guler, Hillsboro, OR (US);
Tahir Ghani, Portland, OR (US);
Charles Wallace, Portland, OR (US);
Hossam Abdallah, Portland, OR (US);
Dario Farias, Portland, OR (US);
Tsuan-Chung Chang, Portland, OR (US);
Chia-Ho Tsai, Hillsboro, OR (US);
Chetana Singh, Portland, OR (US);
Desalegne Teweldebrhan, Sherwood, OR (US);
Robert Joachim, Beaverton, OR (US);
Shengsi Liu, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Techniques for improved extreme ultraviolet (EUV) patterning using assist features, related transistor structures, integrated circuits, and systems, are disclosed. A number of semiconductor fins and assist features are patterned into a semiconductor substrate using EUV. The assist features increase coverage of absorber material in the EUV mask, thereby reducing bright field defects in the EUV patterning. The semiconductor fins and assist features are buried in fill material and a mask is patterned that exposes the assist features and covers the semiconductor fins. The exposed assist features are partially removed and the protected active fins are ultimately used in transistor devices.