The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jan. 18, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Shuen-Shin Liang, Hsinchu, TW;
Chia-Hung Chu, Hsinchu, TW;
Po-Chin Chang, Hsinchu, TW;
Tzu-Pei Chen, Hsinchu, TW;
Ken-Yu Chang, Hsinchu, TW;
Hung-Yi Huang, Hsinchu, TW;
Harry Chien, Hsinchu, TW;
Wei-Yip Loh, Hsinchu, TW;
Chun-I Tsai, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Sung-Li Wang, Hsinchu, TW;
Pinyen Lin, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes: forming a lower metal contact in a trench of a first dielectric structure, the lower metal contact having a height less than a depth of the trench and being made of a first metal material; forming an upper metal contact to fill the trench and to be in contact with the lower metal contact, the upper metal contact being formed of a second metal material different from the first metal material and having a bottom surface with a dimension the same as a dimension of a top surface of the lower metal contact; forming a second dielectric structure on the first dielectric structure; and forming a via contact penetrating through the second dielectric structure to be electrically connected to the upper metal contact, the via contact being formed of a metal material the same as the second metal material.