The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 26, 2024
Filed:
Jul. 19, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ru-Gun Liu, Hsinchu, TW;
Huicheng Chang, Hsinchu, TW;
Chia-Cheng Chen, Hsinchu, TW;
Jyu-Horng Shieh, Hsinchu, TW;
Liang-Yin Chen, Hsinchu, TW;
Shu-Huei Suen, Hsinchu, TW;
Wei-Liang Lin, Hsinchu, TW;
Ya Hui Chang, Hsinchu, TW;
Yi-Nien Su, Hsinchu, TW;
Yung-Sung Yen, Hsinchu, TW;
Chia-Fong Chang, Hsinchu, TW;
Ya-Wen Yeh, Hsinchu, TW;
Yu-Tien Shen, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.