The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Nov. 21, 2022
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Ji Cui, Bolingbrook, IL (US);
Fu-Ming Huang, Changhua County, TW;
Ting-Kui Chang, New Taipei, TW;
Tang-Kuei Chang, Tainan, TW;
Chun-Chieh Lin, Hsinchu, TW;
Wei-Wei Liang, Hsinchu, TW;
Liang-Guang Chen, Hsinchu, TW;
Kei-Wei Chen, Tainan, TW;
Hung Yen, Kaohsiung, TW;
Ting-Hsun Chang, Kaohsiung, TW;
Chi-Hsiang Shen, Tainan, TW;
Li-Chieh Wu, Hsinchu, TW;
Chi-Jen Liu, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.