The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Aug. 01, 2019
Intel Corporation, Santa Clara, CA (US);
Ashish Agrawal, Hillsboro, OR (US);
Jack Kavalieros, Portland, OR (US);
Anand Murthy, Portland, OR (US);
Gilbert Dewey, Hillsboro, OR (US);
Matthew Metz, Portland, OR (US);
Willy Rachmady, Beaverton, OR (US);
Cheng-Ying Huang, Hillsboro, OR (US);
Cory Bomberger, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Thin film transistor structures may include a regrown source or drain material between a channel material and source or drain contact metallization. The source or drain material may be selectively deposited at low temperatures to backfill recesses formed in the channel material. Electrically active dopant impurities may be introduced in-situ during deposition of the source or drain material. The source or drain material may overlap a portion of a gate electrode undercut by the recesses. With channel material of a first composition and source or drain material of a second composition, thin film transistor structures may display low external resistance and high channel mobility.