The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 19, 2023

Filed:

Sep. 13, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Van H. Le, Portland, OR (US);

Abhishek A. Sharma, Hillsboro, OR (US);

Gilbert Dewey, Hillsboro, OR (US);

Kent Millard, Hillsboro, OR (US);

Jack Kavalieros, Portland, OR (US);

Shriram Shivaraman, Hillsboro, OR (US);

Tristan A. Tronic, Aloha, OR (US);

Sanaz Gardner, Portland, OR (US);

Justin R. Weber, Hillsboro, OR (US);

Tahir Ghani, Portland, OR (US);

Li Huey Tan, Hillsboro, OR (US);

Kevin Lin, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/267 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78693 (2013.01); H01L 27/1207 (2013.01); H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 29/66969 (2013.01); H01L 29/78696 (2013.01); H01L 29/267 (2013.01);
Abstract

Described is an apparatus which comprises: a gate comprising a metal; a first layer adjacent to the gate, the first layer comprising a dielectric material; a second layer adjacent to the first layer, the second layer comprising a second material; a third layer adjacent to the second layer, the third layer comprising a third material including an amorphous metal oxide; a fourth layer adjacent to the third layer, the fourth layer comprising a fourth material, wherein the fourth and second materials are different than the third material; a source partially adjacent to the fourth layer; and a drain partially adjacent to the fourth layer.


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